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Announcement on Friday, 24 April 2020 by Dr. Mohammad M. Banat: Power Engineering and Applications: Books
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Summary Information of Dr. Mohamed Albanna
Name Dr. Mohamed Albanna
Affiliation University of Aden, Aden, Yemen
Topics Instrumentation and Measurement Techniques
Instrumentation and Sensor Interfaces
Biography Mohamed Abdultawab Abdulla Al-Banna Telephone: +967-771670928 E-mail: tawab60@yahoo.com Date and Place of birth: 21/7/1964, Aden – Yemen The appointment degree date: 3/3/2009 Scientific degree: Dr. Sc. Microelectronics Academic Rank: Assoc. Prof. Dr. 2- Education 1- Technical University, Sofia, Bulgaria: D. Sc. 2006 Dissertation: “Study and modeling physical and construction parameters of SiGe HBT transistor” 2- Technical University, Sofia, Bulgaria: Master of science and B. Sc. 1991 Thesis: “The electrocardiograph tester” 3- Work 1- Assoc. prof. Dr. Eng. Faculty of engineering Aden University, since November 2009 until now 2- Assist. Prof. Dr. Eng. Faculty of engineering Aden University, since March 2009 until October 2015. 3- Director department of scientific equipment and maintenance at Aden University and lecturer contracting assistant, since 1998 until 2002 4- Radiation equipment, teacher at health manpower institute Sana'a, since January 1994 until January 1996. Developed syllabus and overall course structure. 1992 5- Medical Engineer Faculty of medicine Sana'a University, since January 1992 until June 1998. 4- Independent Course 1- Principle of Electronics & Microprocessor (ECE312), 2- Electronic Circuits (ECE212), 3- Electronic Devices (ECE211), 4- Electronic Engineering Materials (ECE102), 5- Analogue Electronics (ECE201), 6- Electronic Instrumentation (ECE412). 7- Microcontroller interfacing. 5- Publication 1- SiGe НВТ: Technology and Parameters - Frequency Response and Current Gain The Thirteenth International Scientific and Applied Science Conference, Proceedings of The Conference, book 4 September 22, 2004. Authors: Mohamed Abdulla, Geno Yordanov Dimitrov ( ecad.tu-sofia.bg ) 2- UHF SiGe HBT Amplifier: Parameters and Noise Characteristics The Thirteenth International Scientific and Applied Science Conference, Proceedings of The Conference, book 4 September 22, 2004. Authors: Mohamed Abdulla, Geno Yordanov Dimitrov http://ecad.tu-sofia.bg/et/2004/Papers/Microelectronics/Paper-Mohamed2.pdf 3- Drift and Hall Mobility of Hole Carriers in Strained SiGe Film Grown on (001) Si Substrates The fourteenth International Scientific and Applied Science Conference, Proceedings of The Conference, book 5 September 21, 2005. Authors: Mohamed Abdulla, G. Dimitrov http://ecad.tu-sofia.bg/et/2005/pdf/Paper159-M_Abdulah.pdf 4- Design of an improved transistor performance for RF application using Bipole3 Simulator. http://www.uajnas.gov.ye/Volumes/Vol15No3Dec11.pdf 5- Design procedures of bipolar Low Noise Amplifier (LNA) at Radio Frequency (RF) Using S-Parameters http://www.uajnas.gov.ye/Volumes/Vo12Dec12.pdf 6- Effects of Electromagnetic Field (EMF) On Implantable Medical Devices (IMD) http://www.ijgser.com/2018/articles/4/1/1521059703.pdf
User Since Saturday, 26 October 2019
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Published Papers of Dr. Mohamed Albanna
Conference Chairings of Dr. Mohamed Albanna
Conference Committees of Dr. Mohamed Albanna
Program Committees
TrackConferenceDates and Location
Electronic Instrumentation (Instru)MIC-Electronics 20204-6 September 2020 (Remotely) in Valencia, Spain
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Conference Talks by Dr. Mohamed Albanna