Two types of bidirectional RF amplifiers at 2.4 GHz ISM band are designed. The bidirectional amplifier consists of an LNA and a power amplifier (PA). One of the bidirectional amplifiers utilizes RF switches and the other has no switches, i.e. switchless amplifier. All amplifiers are fed from unipolar DC supply. At receiving mode, RF LNA consumes 6 mA of DC current from a 3 V supply, and at transmitting mode, RF PA consumes 55 mA of DC current It is shown that switchless bidirectional amplifier works as good as the other. Infineon SiGe RF transistors BFP640 and BFP650 are used. Amplifiers are built and measured with network analyzer. Their measured characteristics such as 1 dB compression point, input/output match and stability corroborate simulation results. These amplifiers can be easily used as range extenders for any ISM band application.
5th Mosharaka International Conference on Communications, Propagation, and Electronics (MIC-CPE 2012)
Congress
2012 Global Congress on Communications, Propagation, and Electronics (GC-CPE 2012), 3-5 February 2012, Istanbul, Turkey
Pages
30-32
Topics
Microwave Electronics Active Microwave Components and Circuits
ISSN
2227-331X
DOI
BibTeX
@inproceedings{281CPE2012,
title={Bidirectional RF Amplifier for ZigBee Applications},
author={Hilmi Kayhan Yilmaz, and Mehmet Ali Yesil, and Korkut Yegin, and Fahri Ayberk Bagci, and Tolga Çöplü},
booktitle={2012 Global Congress on Communications, Propagation, and Electronics (GC-CPE 2012)},
year={2012},
pages={30-32},
doi={}},
organization={Mosharaka for Research and Studies}
}
