Update on 4 April 2024: GC-ElecEng 2024 is technically co-sponsored by IEEE Jordan Section. Application for IEEE technical co-sponsorship is in progress.
In this paper a broadband Planar Low Noise Amplifier using GaAs HEMT transistor is presented. The single-stage LNA is designed on a FR-4 substrate. Electromagnetic EM simulation is used to take into account the effects of couplings between the lines. The simulation tool used is Advanced Design System (ADS). LNA is adapted at input and output with a series of open stubs lines in order to have a minimal noise figure NF. This LNA is polarized with drain-source voltage of 1V, provide an almost invariant gain of 13.4±1.3 dB with a minimum noise of 0.9±0.1dB. The amplifier is characterized by a very high linearity. The input compression point found is -0.2dBm and the third order input intercept point is 9.8dBm at 4GHz. The consumption power Pdc is very low of the value 56 mW, the total die area is 5.1x2cm2 and the ratio of figure-of- merit is 36.58
Track
Electronics: Electronic Engineering and Applications
Conference
1st Mosharaka International Conference on Emerging Applications of Electrical Engineering (MIC-ElectricApps 2020)
Congress
2020 Global Congress on Electrical Engineering (GC-ElecEng 2020), 4-6 September 2020, Valencia, Spain
Pages
--1
Topics
Circuit Noise Analysis UWB Circuits
ISSN
2227-331X
DOI
BibTeX
@inproceedings{1151ElecEng2020,
title={Broadband Planar Low Noise Amplifier for WLAN Applications},
author={Moustapha El Bakkali, and Mariam El Gharbi, and El Ftouh Hanae, and Naima Amar Touhami, and Tajeddin Elhamadi},
booktitle={2020 Global Congress on Electrical Engineering (GC-ElecEng 2020)},
year={2020},
pages={--1},
doi={}},
organization={Mosharaka for Research and Studies}
}
