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  • ElecEng
  • GC-ElecEng 2020
  • 29.Cnf-1151
ElecEng Congresses with Published Papers
GC-ElecEng 2020, Valencia
GC-ElecEng 2021, Valencia
Papers Published at GC-ElecEng 2020
All 7 Papers
IDAuthors and TitlePages
29.Cnf-105 Dr. Alex Vukovic
Ms. Ayat Alrjoub
Furthering Innovation in Hyper Communication Era
29.Cnf-113 Prof. Càndid Reig
Dr. Maria-Dolores Cubells-Beltran
Mr. Javio Sanchis-Muñoz
Prof. Fernando Pardo
Dr. Jose A. Boluda
Dr. Francisco Vegara
Dr. Susana Cardoso
Address Event Representation (AER) approach to resistive sensor arrays

GS Citations

Prof. Cebrail Ciflikli
Mr. Kadir Aba
Implementing low cost and secure data transmission layer for image transmission in wireless sensor network
29.Cnf-221 Mrs. Aicha Mchbal
Dr. Naima Amar Touhami
Dr. El Ftouh Hanae
Dr. Aziz Dkiouak
Four-element UWB MIMO Antenna Design
29.Cnf-313 Dr. Joan Bas
Dr. Alexis Dowhuszko
Linear Time-Packing Detectors for Optical Feeder Link in High Throughput Satellite Systems
29.Cnf-1144 Mrs. Fériel Boulfani
Dr. Xavier Gendre
Prof. Anne Ruiz-Gazen
Mrs. Martina Salvignol
Anomaly detection for aircraft electrical generator using machine learning in a functional data framework
29.Cnf-1145 Mr. Nabil Morri
Dr. Sameh Hadouaj
Mr. Lamjed Ben Said
Towards an Intelligent control system for public transport traffic efficiency KPIs optimization
29.Cnf-1151 Paper View Page
Title Broadband Planar Low Noise Amplifier for WLAN Applications
Authors Dr. Moustapha El Bakkali, Université Abdelmalek Essaadi, Tétouan, Morocco
Dr. Mariam El Gharbi, Université Abdelmalek Essaadi, Tétouan, Morocco
Dr. El Ftouh Hanae, Université Abdelmalek Essaadi, Tétouan, Morocco
Dr. Naima Amar Touhami, Université Abdelmalek Essaadi, Tétouan, Morocco
Prof. Tajeddin Elhamadi, Université Abdelmalek Essaadi, Tétouan, Morocco
Abstract In this paper a broadband Planar Low Noise Amplifier using GaAs HEMT transistor is presented. The single-stage LNA is designed on a FR-4 substrate. Electromagnetic EM simulation is used to take into account the effects of couplings between the lines. The simulation tool used is Advanced Design System (ADS). LNA is adapted at input and output with a series of open stubs lines in order to have a minimal noise figure NF. This LNA is polarized with drain-source voltage of 1V, provide an almost invariant gain of 13.4±1.3 dB with a minimum noise of 0.9±0.1dB. The amplifier is characterized by a very high linearity. The input compression point found is -0.2dBm and the third order input intercept point is 9.8dBm at 4GHz. The consumption power Pdc is very low of the value 56 mW, the total die area is 5.1x2cm2 and the ratio of figure-of- merit is 36.58
Track Electronics: Electronic Engineering and Applications
Conference 1st Mosharaka International Conference on Emerging Applications of Electrical Engineering (MIC-ElectricApps 2020)
Congress 2020 Global Congress on Electrical Engineering (GC-ElecEng 2020), 4-6 September 2020 (Remotely), Valencia, Spain
Pages --1
Topics Circuit Noise Analysis
UWB Circuits
ISSN 2227-331X
BibTeX @inproceedings{1151ElecEng2020,
title={Broadband Planar Low Noise Amplifier for WLAN Applications},
author={Moustapha El Bakkali, and Mariam El Gharbi, and El Ftouh Hanae, and Naima Amar Touhami, and Tajeddin Elhamadi},
booktitle={2020 Global Congress on Electrical Engineering (GC-ElecEng 2020)},
organization={Mosharaka for Research and Studies} }
Paper Views 623 Paper Views Rank 163/525
Paper Downloads 206 Paper Downloads Rank 170/525
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